Semiconductor device and manufacturing method thereof

ABSTRACT

The objectives of the present invention are achieving TFTs having a small off current and TFT structures optimal for the driving conditions of a pixel portion and driver circuits, and providing a technique of making the differently structured TFTs without increasing the number of manufacturing steps and the production costs. A semiconductor device has a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The semiconductor layer contains a channel forming region, a region containing a first concentration impurity element, a region containing a second concentration impurity element, and a region containing a third concentration impurity element. The gate electrode is formed by laminating an electrode (A) and an electrode (B). One edge portion of the electrode (A) overlaps with the region containing the second concentration impurity element, through the gate insulating film, and another edge portion of the electrode (A) overlaps with the channel forming region, through the gate insulating film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device using asemiconductor film having a crystalline structure, and to a method ofmanufacturing the semiconductor device. More specifically, the presentinvention relates to a semiconductor device having a thin filmtransistor (TFT) containing an active layer having a channel formingregion, a source region, and a drain region from a semiconductor filmhaving a crystalline structure, and a method of manufacturing thesemiconductor device.

2. Description of the Related Art

Liquid crystal display devices have widened the marketplace with theiradvantages of low electric power consumption and space conservation, andhave finally reached the point of substituting for CRTs as televisionsused daily in households. As such, bright display at high definitionequal to or better than that of CRTs, and a price comparable to that ofCRTs, are sought for liquid crystal display devices.

Demanded of TFTs formed in pixel portions of liquid crystal displaydevices in general use as displays (display devices) is mainly a low offcurrent (electric current flowing when the TFTs are in an off operationstate). Even a slight leak of the off current in an off operation stateof the TFT invites a reduction in contrast and in image quality. Therehas been a problem with TFTs containing active layers having acrystalline structure, which are recently used more and more due totheir high field effect mobility, in that the off current becomes large.

An LDD (lightly doped drain) structure is known as a technique ofsuppressing the off current. In Japanese patent #3072655 structure shownin FIG. 2A), a structure is disclosed in which a first transistor and asecond transistor are connected in series, sandwiching a lowconcentration impurity region (double gate structure having a lowconcentration impurity region sandwiched by channel forming regions).

The demand for making liquid crystal display devices have higherdefinition is met by increasing the number of pixels, and the demand forhigher brightness is met by increasing the aperture ratio. Screen sizeis determined by standards, and therefore it is necessary to increasethe number of pixels within a limited pixel surface area. This meansthat the pixel size must be shrunk, and that a technique for furtherincreasing the aperture ratio must be achieved while reducing the pixelsize. There are limitations on making the wiring width narrower forincrease of the aperture ratio, considering problems such as a rise ofthe wiring resistance. Thus, making the size of switching TFTs withinthe pixels smaller can be considered.

Further, the size of storage capacitors can be made smaller providedthat the off current of the switching TFTs of the pixels can be madesmaller. Therefore, it is very important to make TFTs having a low offcurrent in order to additionally increase the aperture ratio.

However, the characteristics required by the circuits used on the samesubstrate are different. It is necessary to make TFTs having differentstructures depending upon which circuit they are used for. TFTs aremanufactured by lamination while performing steps for etchingsemiconductor films, insulating films, and conductive films intopredetermined shapes using photomasks. Therefore, if the TFT structureis optimized according to the requirements of the pixel portion or eachdriver circuit, then the number of photomasks simply increases, themanufacturing processes become complex, and the number of process stepsinevitably increases. Further, TFTs having a sufficiently low offcurrent cannot be manufactured even if small TFTs are manufactured inorder to increase the aperture ratio in the pixel portion, and thereliability drops. It is not easy to manufacture the desired displaydevice (semiconductor device).

SUMMARY OF THE INVENTION

With the aim of solving these problems, an object of the presentinvention is to provide a TFT having a low off current at a small pixelsize (small TFT size), and to provide a technique for achieving optimalTFT structures for the driving conditions of a pixel portion and drivercircuits by using a small number of photomasks.

Further, an object of the present invention is to provide a technique ofmaking different TFTs, having a low off current and having TFTstructures optimal for the driving conditions of a pixel portion anddriver circuits, without increasing the number of manufacturingprocesses or the production costs.

A semiconductor device according to the present invention ischaracterized by comprising: a semiconductor layer; a gate insulatingfilm formed on the semiconductor layer; and a gate electrode formed onthe gate insulating film, in which: the semiconductor layer has achannel forming region, a region containing a first concentrationimpurity element, a region containing a second concentration impurityelement, and a region containing a third concentration impurity element;the gate electrode is a laminate of an electrode (A) and an electrode(B); and one edge portion of the electrode (A) overlaps with the regioncontaining the second concentration impurity element, through the gateinsulating film, and another edge portion of the electrode (A) overlapswith the channel forming region, through the gate insulating film.

Further, a semiconductor device according to the present invention ischaracterized by comprising: a semiconductor layer; a gate insulatingfilm formed on the semiconductor layer; a first gate electrode formed onthe gate insulating film; and a second gate electrode formed on the gateinsulating film, in which: the semiconductor layer has a channel formingregion, a region containing a first concentration impurity element, aregion containing a second concentration impurity element, and a regioncontaining a third concentration impurity element; the first gateelectrode and the second gate electrode are laminates of an electrode(A) and an electrode (B); one edge portion of the first electrodeoverlaps with the region containing the second concentration impurityelement, through the gate insulating film, and another edge portion ofthe first electrode overlaps with the channel forming region, throughthe gate insulating film; and the region containing the thirdconcentration impurity element exists between: the region containing thesecond concentration impurity element and overlapping with the electrode(A) of the first gate electrode; and the region containing the secondconcentration impurity element and overlapping with the electrode (A) ofthe second gate electrode.

Further, a semiconductor device according to the present invention ischaracterized by comprising: a semiconductor layer; a gate insulatingfilm formed on the semiconductor layer; a first gate electrode formed onthe gate insulating film; and a second gate electrode formed on the gateinsulating film, in which: the semiconductor layer has a channel formingregion, a region containing a first concentration impurity element, aregion containing a second concentration impurity element, and a regioncontaining a third concentration impurity element; the first gateelectrode and the second gate electrode are laminates of an electrode(A) and an electrode (B); one edge portion of the electrode (A) overlapswith the region containing the second concentration impurity element,through the gate insulating film, and the other edge portion of theelectrode (A) overlaps with the channel forming region, through the gateinsulating film; the channel forming region is sandwiched between ann-type impurity region containing a first concentration of an n-typeimpurity element, and an n-type impurity region containing a secondconcentration of the n-type impurity element; an n-type impurity regioncontaining a third concentration of the n-type impurity element existsadjacent to the n-type impurity region containing the firstconcentration of the n-type impurity element, and an n-type impurityregion containing the third concentration of the n-type impurity elementexists adjacent to the n-type impurity region containing the secondconcentration of the n-type impurity element; the region containing thethird concentration impurity element exists between: the regioncontaining the second concentration impurity element and overlappingwith the electrode (A) of the first gate electrode; and the regioncontaining the second concentration impurity element and overlappingwith the electrode (A) of the second gate electrode; and the n-typeimpurity region containing the third concentration impurity element,adjacent to the n-type impurity region containing the firstconcentration impurity element, functions as a source region or a drainregion.

Further, according to the present invention, the above-mentionedsemiconductor device is characterized in that: the region containing thefirst concentration impurity element contains the n-type impurityelement at a concentration of 1×10¹⁵ to 1×10¹⁷/cm³; the regioncontaining the second concentration impurity element contains the n-typeimpurity element at a concentration of 1×10¹⁷ to 1×10¹⁹/cm³; and theregion containing the third concentration impurity element contains then-type impurity element at a concentration of 1×10²⁰ to 1×10²¹/cm³.

Further, according to the present invention, the above-mentionedsemiconductor device is characterized in that: the electrode (A) is: aconductive film made from an element selected from the group consistingof W, Mo, Ta, and Ti; a conductive film made from a chemical compoundhaving one of the elements as its main constituent; or a conductive filmmade from an alloy having one of the elements as its main constituent.

The semiconductor device disclosed by the present invention has a regionwhich contains a second concentration impurity element and whichoverlaps with a gate electrode through a gate insulating film, and animpurity region which contains a first concentration impurity elementand which does not overlap with the gate electrode. The regioncontaining the second concentration impurity element has an impurityregion (Loff region) which contains the first concentration impurityelement and which does not overlap with the gate electrode. Bypossessing this Loff region, the width of the energy barrier of PNjunctions formed within the semiconductor layer becomes broader, theelectric field strength added to the PN junction portions becomesweaker, and the off current can be reduced. Further, by having theimpurity region (Lov region) which contains the second concentration ofthe impurity and which overlaps with the gate electrode through the gateinsulating film, this becomes a structure in which on currentdegradation is prevented. A semiconductor device having high reliabilitycan therefore be obtained.

A method of manufacturing the aforementioned semiconductor device (TFT)is characterized by comprising the steps of:

forming a first semiconductor layer, a second semiconductor layer, athird semiconductor layer, and a fourth semiconductor layer on aninsulating surface;

forming a gate insulating film on the first through the fourthsemiconductor layers;

forming a first conductive film and a second conductive film on the gateinsulating film;

etching the first conductive film and the second conductive film,forming a first shape gate electrode, composed of a first electrode anda second electrode, on the first through the fourth semiconductorlayers;

etching the first electrode and the second electrode, forming a secondshape gate electrode, composed of a third electrode and a fourthelectrode;

adding an n-type impurity element to the first through the fourthsemiconductor layers in a self aligning manner, with the second shapegate electrode as a mask, forming an n-type impurity region containing afirst concentration of the n-type impurity element;

forming a first mask covering all of the second semiconductor layer andall of the fourth semiconductor layer, and forming a second maskcovering a portion of the third semiconductor layer;

forming a second concentration impurity region, and an n-type impurityregion containing a third concentration of the n-type impurity element,in the first semiconductor layer, through the third electrode, with thefourth electrode on the first semiconductor layer as a mask; and

forming an n-type impurity region containing a second concentration ofthe n-type impurity element, and an n-type impurity region containingthe third concentration of the n-type impurity element, in the thirdsemiconductor layer, through the third electrode, with the fourthelectrode and the second mask as masks.

TFTs meeting the demands of different circuits can thus be formedseparately on the same substrate without increasing the number ofmanufacturing process steps and without increasing production costs.Thus, a semiconductor device having a low off current and highreliability can be manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B are diagrams showing a semiconductor device of thepresent invention, and the electrical characteristics of thesemiconductor device, respectively;

FIGS. 2A and 2B are diagrams showing the structure of an example of aconventional semiconductor device, and the electrical characteristics ofthe conventional semiconductor device, respectively;

FIGS. 3A to 3C are diagrams showing a manufacturing process of asemiconductor device of the present invention;

FIGS. 4A to 4C are diagrams showing the manufacturing process of asemiconductor device of the present invention;

FIGS. 5A to 5C are diagrams showing the manufacturing process of asemiconductor device of the present invention;

FIGS. 6A to 6C are diagrams showing an example of an embodiment of thepresent invention;

FIGS. 7A to 7E are diagrams showing an example of an embodiment of thepresent invention;

FIGS. 8A to 8C are diagrams showing an example of an embodiment of thepresent invention;

FIG. 9 is a diagram showing an example of an embodiment of the presentinvention;

FIG. 10 is a diagram showing an example of an embodiment of the presentinvention;

FIGS. 11A to 11F are diagrams showing examples of electric equipment;

FIGS. 12A to 12D are diagrams showing examples of electric equipment;

FIGS. 13A to 13C are diagrams showing examples of electric equipment;

FIGS. 14A to 14D are diagrams showing the results of comparing theelectrical characteristics between a semiconductor device of the presentinvention and an example of a conventional semiconductor device;

FIG. 15 is a diagram showing an example of a light emitting elementmanufactured by applying the present invention; and

FIG. 16 is an upper surface diagram of a semiconductor device of thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode 1

The structure of a TFT of the present invention is shown in FIG. 1A, andthe results of measuring the electrical characteristics of the TFT ofthe present invention are shown in FIG. 1B.

The TFT has a semiconductor layer on an insulating surface, a gateinsulating film on the semiconductor layer, and a gate electrode on thegate insulating film. The semiconductor layer contains a channel formingregion 13, an n-type impurity region 14 containing a first concentrationimpurity element which imparts n-type conductivity (hereafter referredto as n-type impurity element), an n-type impurity region 12 containinga second concentration of the n-type impurity element, and n-typeimpurity regions 11 and 15 containing a third concentration of then-type impurity element. The gate electrode has a first gate electrode16 and a second gate electrode 17. The first gate electrode and thesecond gate electrode are composed of electrodes (A) 16 a and 17 a, andelectrodes (B) 16 b and 17 b, respectively. One edge portions of theelectrodes (A) 16 a and 17 a overlap with the n-type impurity region 12containing the second concentration of the n-type impurity element,through the gate insulating film. Another edge portions of theelectrodes (A) 16 a and 17 a overlap with the channel forming region,through the gate insulating film.

Further, the n-type impurity region 11 containing the thirdconcentration of the n-type impurity element is disposed between: then-type impurity region 12 which contains the second concentration of then-type impurity element and which overlaps with the electrode (A) 16 aof the first gate electrode; and the n-type impurity region whichcontains the second concentration of the n-type impurity element andwhich overlaps with the electrode (A) 17 a of the second gate electrode.

Note that the n-type impurity region 14 containing the firstconcentration of the n-type impurity element has a concentration of1×10¹⁵ to 1×10¹⁷/cm³ of the n-type impurity element. Further, the n-typeimpurity region 12 containing the second concentration of the n-typeimpurity element has a concentration of 1×10¹⁷ to 1×10¹⁹/cm³ of then-type impurity element. The n-type impurity regions 11 and 15,containing the third concentration of the n-type impurity element, haveconcentrations of 1×10²⁰ to 1×10²¹ /cm³ of the n-type impurity element.

Further, in this specification, the n-type impurity region containingthe first concentration of the n-type impurity element is an LDD(lightly doped drain) region containing the n-type impurity element at alow concentration, and this region is referred to as an Loff region(where “off” indicates “offset”) because it is a region that does notoverlap with the gate electrode. The n-type impurity region 12containing the second concentration of the n-type impurity element isreferred to as an Lov region (where “ov” indicates “overlap”) because itoverlaps with the electrode (A) through the gate insulating film.

Note that the applicants of the present invention manufactured TFTswhich, as disclosed by Japanese Patent #3072655, have a double gatestructure (a first gate electrode 25 and a second gate electrode 26) inwhich: a first channel forming region and a second channel formingregion, n-type impurity regions 21 and 23 containing the secondconcentration of the n-type impurity element, and an n-type impurityregion 24 containing the third concentration of the n-type impurityelement are contained in a semiconductor layer; and in addition, ann-type impurity region (internal L) 21 containing the secondconcentration of the n-type impurity element is formed between the firstchannel forming region and the second channel forming region. Aschematic diagram of the TFT structure is shown in FIG. 2A, and theresults of measuring the electrical characteristics of the TFTs areshown in FIG. 2B.

Comparing the behavior in the off region of the TFT of the presentinvention with that of the TFT disclosed by the above patent, it can beseen that both display almost the same type of behavior (the off currentincreases by a little in accordance with a shift of a gate voltage inthe negative direction). However, when investigating the on current atthe time of VG=10 V and 20 V, for example, the TFT of the presentinvention was found to have an on current of 1×10⁻⁴ A and 6×10³ A,respectively. The TFT structure disclosed by the above patent was foundto have an on current of 3×10⁻⁴ A and 8×10⁻³ A at the time of VG=10 Vand 20 V, respectively. Comparing the behavior in the on region, it canbe seen that a higher on current can be obtained in the TFT of thepresent invention.

Unless the conventional technique TFT of FIGS. 2A and 2B is 3 μm largerthan the size of the semiconductor layer of the TFT disclosed by thepresent invention, the TFT having similar behavior in the off regioncannot be obtained. Further, the on current is a parameter for easilyevaluating reliability, and the on current obtained by the TFT disclosedby the present invention is larger than the on current obtained with theTFT structure disclosed by the aforementioned patent. This is thought tobe because the Loff region and the Lov region are formed in the TFTdisclosed by the present invention. TFTs having a small off current canthus be obtained even if the size of the semiconductor layer is small.

According to the present invention, both the problem of having to makethe pixel size smaller due to an increased number of pixels for highimage quality, and the problem of having to achieve a high apertureratio for higher brightness, can thus be resolved at the same time.

Embodiment Mode 2

The electrical characteristics of TFTs manufactured by setting the sizebetween a plurality of gate electrodes (two gate electrodes inEmbodiment Mode 2) equal to 2 μm, for multi-gate TFTs having the TFTstructure disclosed by the present invention (refer to FIG. 1A) and forthose having the TF1 structure already disclosed by a conventionaltechnique (refer to FIG. 2A), are compared in Embodiment Mode 2.

Measurements were performed with the gate voltage VG varied from −20 to20 V, and the source voltage VS=0 V. The results of measuring thecurrent (on current) at the following two points: (1) the drain voltageVD=1 V and VG=10 V; and (2) the drain voltage VD=14 V and VG=10 V, andthe results of measuring the current (off current) at the following twopoints: (3) VD=1 V and VG=−17.5 V; and (4) VD=14 V and VG=−4.5 V, areshown in FIGS. 14A to 14D, respectively.

The on current at the measurement points (1) and (2) is higher with thestructure of the present invention compared to the conventionalstructure. This is thought to be because a region exists in which thelow concentration impurity region (LDD region) overlaps with the gateelectrode, through the gate insulating film, and therefore the oncurrent is higher.

The off current at the measurement points (3) and (4) is lower with thestructure of the present invention compared to the conventionalstructure. Therefore the surface area occupied by a storage capacitorcan be made smaller by the amount that the leak current becomes lower,provided that the very low off current TFT is used as a pixel switchingelement. Thus, the aperture ratio in a pixel portion can be increased.

It is thus understood that better electrical characteristics (on currentand off current) can be obtained with TFTs having the structuredisclosed by the present invention when the electrical characteristicsof two TFTs having different structures and the same size are comparedto each other.

Embodiments Embodiment 1

One embodiment of the present invention is explained below using FIGS.3A to 5C. A method of manufacturing a pixel portion and driver circuitTFTs (n-channel TFTs and a p-channel TFT), formed in the periphery ofthe pixel portion, at the same time on the same substrate is explainedhere in detail.

In FIG. 3A, aluminum borosilicate glass is used for a substrate 100. Afirst insulating film is formed on the substrate 100. A 50 nm thickfirst silicon oxynitride film 101 a formed using SiH₄, NH₃, and N₂O asreactant gasses, and a 100 nm thick second silicon oxynitride film 101 bformed using SiH₄ and N₂O as reactant gasses, are laminated in

Embodiment 1.

Semiconductor layers 103 to 106 (for convenience in Embodiment 1, afirst semiconductor layer 103, a second semiconductor layer 104, a thirdsemiconductor layer 105, and a fourth semiconductor layer 106) areformed of a semiconductor film 102 having a crystalline structure. Thecrystalline semiconductor film 102 is formed by using a knowncrystallization method after forming an amorphous semiconductor film onthe first insulating film. In Embodiment 1, a 50 nm thick amorphoussilicon film is formed, light from an excimer laser is condensed into alinear shape by an optical system, and this light is irradiated onto theamorphous silicon film, performing crystallization. The power density ofthe laser light is set to 300 mJ/cm², and the linear shape laser lighthaving a thickness of 500 μm is irradiated over the entire surface ofthe amorphous silicon film while overlapping at a 90 to 98% ratio.

After crystallization, boron is added to the semiconductor film by iondoping as an acceptor impurity in order to control the TFT thresholdvalue voltage. The concentration of the added boron may be suitablydetermined by an operator.

The polycrystalline silicon film thus formed is then divided into islandshapes by an etching process, forming the semiconductor films 103 to106. A 110 nm thick silicon oxynitride film is then formed thereon byplasma CVD, using SiH₄ and N₂O as reactant gasses, as a gate insulatingfilm 107 (see FIG. 3B).

In addition, a tantalum nitride film as a first conductive film 108 isformed on the gate insulating film 107 by sputtering to have a thicknessof 30 nm, and tungsten is deposited with a thickness of 300 nm as asecond conductive film 109 (see FIG. 3C).

Masks 110 to 113 are formed next using a photosensitive resist material,as shown in FIG. 4A. A first etching process is then performed on thefirst conductive film 108 and the second conductive film 109. An ICP(inductively coupled plasma) etching method is used for etching. Thereis no limitation on an etching gas, but a gas mixture of CF₄, Cl₂, andO₂ is used as an etching gas for etching of the W film or the tantalumnitride film. The gas flow rates are set to 25/25/10 sccm, respectively.A 500 W RF (13.56 MHz) electric power is applied to a coil shapeelectrode at a pressure of 1 Pa, and etching is performed. A 150 W RF(13.56 MHz) electric power is also applied to the substrate side (testpiece stage), effectively applying a negative self-bias voltage. The Wfilm is mainly etched into a predetermined shape under the above firstetching conditions.

Next, the etching gasses are changed to CF₄ and Cl₂, the gas flow rateratio is set to 30/30, an RF (13.56 MHz) electric power of 500 W isapplied to the coil shape electrode at a pressure of 1 Pa, generating aplasma, and etching is performed for on the order of 30 seconds. An RF(13.56 MHz) electric power of 20 W is also applied to the substrate side(test piece stage), effectively applying a negative self-bias voltage.The mixed gas of CF₄ and Cl₂ etches the tantalum nitride film and the Wfilm at similar speeds. First shape gate electrodes 114 to 117 composedof first electrodes 114 a to 117 a and second gate electrodes 114 b to117 b, respectively, having tapered edge portions are thus formed. Thetaper is formed from 45 to 75°. Note that the etching time may beincreased on the order of 10 to 20% in order to perform etching withoutany residue on the second insulating film. Note also that the surfacesof regions of the gate insulating film 107 which are not covered by thefirst shape gate electrodes 114 to 117 are etched on the order of 20 to50 nm, forming regions which have become thinner.

A second etching process is performed next as shown in FIG. 4B withoutremoving the masks 110 to 113. CF₄, Cl₂, and O₂ are used as etchinggasses, and the gas flow rates are set so as to be 20/20/20,respectively. Etching is performed at a pressure of 1 Pa with an RF(13.56 MHz) electric power of 500 W applied to a coil shape electrode.An RF (13.56 MHz) electric power of 20 W is also applied to thesubstrate side (test piece stage), effectively applying a lower selfbias voltage compared to that of the first etching process. The W filmused as the second conductive film is etched using these etchingconditions. Second shape gate electrodes 118 to 121 composed of thirdelectrodes 118 a to 121 a and fourth electrodes 118 b to 121 b,respectively, are thus formed. The surfaces of regions of the gateinsulating film 107 which are not covered by the second shape gateelectrodes 118 to 121 are etched on the order of 20 to 50 nm, becomingthinner. Note that, for convenience, the third electrodes and the fourthelectrodes are also referred to as electrodes (A) and electrodes (B),respectively, in this specification.

A first doping process for adding an impurity element which impartsn-type conductivity (an n-type impurity element) to the semiconductorlayers is then performed. The first doping process is performed by iondoping in which ions are injected without separation of mass. Doping isperformed using the first shape of gate electrodes 114 to 117 as masks,and n-type impurity regions 122 to 125 containing a first concentrationof the n-type impurity element are formed in the semiconductor films 103to 106 using phosphine (PH₃) gas diluted by hydrogen, or phosphine gasdiluted by a noble gas. The phosphorous concentration of the n-typeimpurity regions 122 to 125 containing the first concentration of then-type impurity element thus formed by doping is set so as to becomefrom 1×10₁₆ to 1×10¹⁷/cm³.

Next, first masks 126 and 128 are then formed covering all of the secondsemiconductor layer 104 and all of the fourth semiconductor layer 106,and a second mask 127 is formed covering a portion of the thirdsemiconductor layer 105 and a portion of the second shape gate electrode120 on the third semiconductor layer 105. A second doping process isthen performed. N-type impurity regions 129 and 130 containing a secondconcentration of the n-type impurity element are formed in the firstsemiconductor layer 103 and in the third semiconductor layer 105,through the third electrodes (electrodes (A)) 118 a and 120 a, by thesecond doping process. The phosphorous concentration of the n-typeimpurity regions containing the second concentration of the n-typeimpurity element thus formed by doping is set so as to become from1×10¹⁷ to 1×10¹⁹/cm³.

A third doping process is performed next with the masks 126 to 128 leftas is. An n-type impurity element is added to the first semiconductorlayer 103 and to the third semiconductor layer 105, through the gateinsulating film 107, forming n-type impurity regions 131 and 132containing a third concentration of the n-type impurity element. Thephosphorous concentration of the n-type impurity regions containing thethird concentration of the n-type impurity element thus formed by dopingis set so as to become from 1×10²⁰ to 1×10²¹/cm³.

Note that although the impurity element is added twice in Embodiment 1as discussed above, the n-type impurity regions containing the secondconcentration of the n-type impurity element and the n-type impurityregions containing the third concentration of the n-type impurityelement can also be formed in one doping step by controlling the filmthickness of the gate insulating film and the film thickness of thethird electrode forming the gate electrode, and by regulating theacceleration voltage used in doping.

Masks 133 and 134 are formed next as shown by FIG. 5A, covering thefirst semiconductor layer 103 and the third semiconductor layer 105, anda fourth doping process is performed. Doping is performed using diborane(B₂H₆) gas diluted by hydrogen, or using diborane gas diluted by a noblegas. A p-type impurity region 136 containing a first concentration ofthe p-type impurity element, and a p-type impurity region 135 containinga second concentration of the p-type impurity element are formed in thesecond semiconductor layer 104. Further, in the fourth semiconductorlayer 107 that forms a storage capacitor in the pixel portion, a p-typeimpurity region 138 containing the first concentration of the p-typeimpurity element, and a p-type impurity region 137 containing the secondconcentration of the p-type impurity element are formed. The p-typeimpurity regions 136 and 138 containing the first concentration of thep-type impurity element are formed in regions overlapping with theelectrodes (A) 119 a and 121 a, and contain boron in a concentrationrange from 1×10¹⁸ to 1×10²⁰/cm³. The p-type impurity regions 135 and 137containing the second concentration of the p-type impurity elementcontain boron in a concentration range from 2×10²⁰ to 3×10²¹/cm³.

Regions in which phosphorous or boron is added to the respectivesemiconductor films are thus formed by the processes up through thispoint. The second shape gate electrodes 118 to 120 become gateelectrodes. Further, the second shape electrode 121 becomes onecapacitor electrode forming a storage capacitor in the pixel portion.

Next, as shown in FIG. 5B, light from the second harmonic (532 nm) of aYAG laser is irradiated to the semiconductor films in order to performactivation of the impurity elements added to the semiconductor films.

Note that, in addition to the method of irradiating light from thesecond harmonic of a YAG laser disclosed in Embodiment 1, a method ofperforming heat treatment at 550° C. for 4 hours using a furnace, or aheat treatment method performed by RTA (including RTA methods using gasor light as a heat source) may also be performed as the method of Iactivating the impurity elements added to the semiconductor layers. Ifheat treatment using a furnace is performed, then an insulating filmcovering the gate electrodes and the gate insulating film may be formedprior to heat treatment in order to prevent oxidation of the conductivefilms forming the gate electrodes, and a reduced pressure nitrogenatmosphere may be used for the atmosphere in performing heat treatment.There are many methods of activating the impurity elements added to thesemiconductor layers, and the actual method used may be suitablydetermined by the operator.

A first interlayer insulating film 139 made of a silicon nitride film ora silicon oxynitride film is then formed with a thickness of 50 nm byplasma CVD, as shown in FIG. 5B, and heat treatment is performed at 410°C. using a clean oven. Hydrogenation of the semiconductor film isperformed by hydrogen emitted from the silicon nitride film or from thesilicon oxynitride film.

A second interlayer insulating film 140 is then formed from acrylic onthe first interlayer insulating film 139, and contact holes are formed.A part of the first interlayer insulating film and the third interlayerinsulating film to form an external input-output terminal portiontherein are also removed in this etching process. Wirings 142 to 149 arethen formed by laminating a titanium film and an aluminum film.

A driver circuit 205 having an n-channel TFT 201 and a p-channel TFT202, and a pixel portion 206 having a pixel TFT 203 and a storagecapacitor 204 are thus formed on the same substrate. The storagecapacitor 204 is constituted of the semiconductor layer 106, the gateinsulating film 107, and the capacitor wiring 121.

An upper surface diagram of the pixel portion formed by the processsteps up through this point is shown in FIG. 16. An upper surfacediagram of nearly one pixel portion is shown in FIG. 16, and theattached reference numerals are common with those of FIGS. 5A to SC.Further, cross sectional structures cut along line segments A–A′ andB–B′ of FIG. 16 correspond to FIGS. 5A to 5C. The TFT size in the pixelstructure of FIG. 16 can be made smaller by applying the presentinvention, and therefore the aperture ratio of the pixel portion can beincreased. Further, it becomes possible to superpose the gate wiringsand the semiconductor layers by forming the gate wirings and the gateelectrodes on different layers, and the gate wirings have an addedfunction as light shielding films. This becomes a structure in which theformation of a light shielding film (black matrix) can be omitted if theedge portions of the pixel electrodes are disposed so as to overlap withthe source wirings such that the gaps between the pixel electrodes areshielded from light.

The n-channel TFT 201 of the driver circuit 205 has: a channel formingregion 150; an n-type impurity region 129 (Lov region) which containsthe second concentration of the n-type impurity element and whichoverlaps with the electrode (A) 118 a forming the gate electrode; and ann-type impurity region 131 which contains the third concentration of then-type impurity element and which functions as a source region or adrain region. The length of the Lov region in the channel longitudinaldirection is set from 0.5 to 2.5 μm, preferably 1.5 μm. The structure ofthis type of Lov region is chosen with the goal of preventing TFTdeterioration mainly due to the hot carrier effect. Circuits such asshift register circuits, buffer circuits, level shifter circuits, andlatch circuits can be formed by the n-channel TFT and the p-channel TFT.In particular, the n-channel TFT 201 structure is suitable for buffercircuits having a high driver voltage because of its goal of preventingdeterioration due to the hot carrier effect.

The p-channel TFT 202 of the driver circuit 205 has: a channel formingregion 151; a p-type impurity region 135 (region functioning as a sourceregion or a drain region) which contains the first concentration p-typeimpurity element and which is formed on the outside of the electrode (A)119 a forming the gate electrode; and a p-type impurity region 136containing the second concentration p-type impurity element andoverlapping with the electrode (A) 119 a.

The TFT (pixel TFT) 203 of the pixel portion 206 has: a channel formingregion 152; an n-type impurity region 124 which contains the firstconcentration of the n-type impurity element and which is formed on theoutside of the channel forming region 152; an n-type impurity region 130containing the second concentration of the n-type impurity element andoverlapping with the electrode (A) 120 a forming the gate electrodethrough the gate insulating film; and an n-type impurity region 132containing the third concentration of the n-type impurity element andfunctioning as a source region or a drain region. Furthermore, p-typeimpurity regions 137 and 138 are formed in the semiconductor layer 106which functions as one electrode of the storage capacitor 204.

The present invention can thus determine suitable locationscorresponding to the circuits having different operating conditions inthe driver circuit portion and in the pixel portion.

FIG. 10 is a circuit block diagram showing an example of the circuitstructure of an active matrix substrate. A pixel portion 601 formed frombuilt-in TFTs, a date signal line driver circuit 602, and a scanningsignal line driver circuit 606 are formed.

The data signal line driver circuit 602 is structured from a shiftregister 603, latches 604 and 605, and in addition, buffer circuits andthe like. Clock signals and start signals are input to the shiftregister 603, and digital data signals and latch signals are input tothe latches. Further, the scanning signal line driver circuit 606 alsois structured from shift registers, buffer circuits, and the like. Theremay be an arbitrary number of pixels in the pixel portion 601, and1024×768 pixels are formed for XGA.

A display device having active matrix drive can be formed by using theactive matrix substrate. The pixel electrodes are formed by a materialhaving light reflecting properties in Embodiment 1, and therefore areflection type display device can be formed if this substrate isapplied to a liquid crystal display device. A liquid crystal displaydevice or a light emitting device in which the pixel portion isconstituted of organic light emitting elements can be formed from thistype of substrate. An active matrix substrate corresponding to areflection type display device can therefore be manufactured.

Embodiment 2

Another embodiment of a method of manufacturing a semiconductor deviceis explained in Embodiment 2 using FIGS. 6A to 6C. Note that processesidentical to those of Embodiment 1 are used up through the first etchingprocess shown in FIG. 4A. The state of a substrate on which elements arebeing formed, up through completion of the first etching process of FIG.4A, is shown in FIG. 6A.

The state of FIG. 6A has the substrate 100, the base insulating film 101(the base insulating film 101 a made of a silicon oxynitride film andthe base insulating film 101 b made of a silicon oxynitride film), thefirst through the fourth semiconductor layers 103 to 106, the gateinsulating film 107, and the first shape gate electrodes 114 to 117.

A first doping process is performed here. An n-type impurity element isadded to the first through the fourth semiconductor layers 103 to 106,forming n-type impurity regions 301 to 304 containing the firstconcentration of the n-type impurity element, at a low concentration of1×10¹⁵ to 1×10¹⁷/cm³.

A second etching process is performed next. The first shape gateelectrodes 114 to 117 (composed of the first electrodes 114 a to 117 aand the second electrodes 114 b to 117 b) are etched, forming secondshape gate electrodes 305 to 308 (composed of electrodes (A) 305 a to308 a and electrodes (B) 305 b to 308 b).

After completing the process steps up through this point, manufacturingproceeds similarly to Embodiment 1 from the second doping process shownby FIG. 4C, and the active matrix substrate like that shown in FIG. 5Ccan be manufactured.

Embodiment 3

An embodiment of a method of manufacturing a semiconductor film used inan active layer in Embodiment 1 or Embodiment 2 is explained using FIGS.7A to 7E. In this method, a metallic element having a catalytic actionis added to the entire surface of a semiconductor film having anamorphous structure, crystallization is performed, and then gettering isperformed.

A high field effect mobility can be obtained by using the semiconductorfilm having good crystallinity obtained by the method disclosed inEmbodiment 3 as an active layer, and a TFT having high reliability canbe manufactured.

There are no particular limitations placed on the material of asubstrate 701 in FIG. 7A, but preferably a material such as bariumborosilicate glass, aluminum borosilicate glass, or quartz can be used.A first silicon oxynitride film 702 manufactured by plasma CVD fromSiH₄, NH₃, and N₂O with a thickness of 50 nm, and a second siliconoxynitride film 703 manufactured from SiH₄ and N₂O with a thickness of100 nm, are formed on the surface of the substrate 701 as baseinsulating films. The base insulating films are formed so that alkalinemetals contained in the glass substrate do not diffuse withinsemiconductor films formed on the substrate, and it is possible to omitthe base insulating films if quartz is used for the substrate.

A semiconductor material having silicon as its main constituent is usedfor a semiconductor film 704 having an amorphous structure formed on thebase insulating film. A film such as an amorphous silicon film or anamorphous silicon germanium film is typically applied, and formed havinga thickness of 10 to 100 nm by plasma CVD, reduced pressure CVD, orsputtering. The concentration of impurities such as oxygen and nitrogencontained in the amorphous semiconductor film 704 may be reduced to alevel equal to, or less than, 5×10¹⁸/cm³ in order to obtain goodcrystals. These impurities become primary factors hinderingcrystallization of the amorphous semiconductor, and further, cause thedensity of capture centers and recrystallization centers to increase. Itis therefore preferable to use very high purity material gasses, andalso to use a CVD apparatus corresponding to an extremely high vacuum,in which the inside of the reaction chamber has undergone mirror surfaceprocessing (field polishing processing), and which is prepared with anoil free vacuum evacuation system.

A metallic element that has a catalytic action for promotingcrystallization is then added to the surface of the amorphoussemiconductor film 704. One element, or a plurality of elements,selected from the group consisting of iron (Fe), nickel (Ni), cobalt(Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium(Ir), platinum (Pt), copper (Cu), gold (Au) and the like can be used asthe metallic element that has a catalytic action for promotingcrystallization of the semiconductor film. Nickel is typically used, anda catalyst containing layer 705 is formed by applying a nickel acetatesalt solution, containing from 1 to 100 ppm nickel by weight, using aspinner. In this case, an extremely thin oxidized film may be formedfrom an ozone containing aqueous solution as a surface preparation ofthe amorphous structure semiconductor film 704 in order to increase thewetting of the liquid. A clean surface is formed after etching the oxidefilm using a mixed solution of hydrogen fluoride and hydrogen peroxide,and an extremely thin oxide film is formed once again by processing withan ozone containing aqueous solution. The surface of semiconductor filmssuch as silicon is initially hydrophobic, and therefore a uniformapplication of the nickel acetate salt solution can be achieved byforming the oxide film.

The catalyst containing layer 705 is of course not limited to this typeof method, and may also be formed using sputtering, evaporation, plasmaprocessing, and the like. Furthermore, the catalyst containing layer 705may also be formed before forming the amorphous structure semiconductorfilm 704, that is the catalyst containing layer 705 may be formed on thebase insulating film.

Heat treatment is performed for crystallization while maintaining thestate in which the amorphous structure semiconductor film 704 and thecatalytic element containing layer 705 are in contact. A furnaceannealing method using an electric oven, or a rapid thermal annealing(hereafter referred to as RTA) method using a heat source such as ahalogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp,a high pressure sodium lamp, or a high pressure mercury lamp is employedas the heat treatment method. Considering productivity, RTA can bethought of a preferable method to be employed.

A heat treatment lamp light source is turned on for 1 to 60 seconds,preferably for 30 to 60 seconds, and this is repeated between 1 and 10times, preferably between 2 and 6 times, when performing the RTA method.The intensity of light emitted from the lamp light source may bearbitrarily set, but it is preferable to set the intensity such that thesemiconductor film is instantaneously heated to between 600 and 1000°C., preferably from 650 to 750° C. Even with this high temperature, thesemiconductor film is only heated instantaneously, and therefore thesubstrate 100 itself does not distort and change in shape. The amorphoussemiconductor film can thus be crystallized, and a semiconductor film706 having a crystalline structure can thus be obtained as shown in FIG.7B. Crystallization by this type of process was first achieved byforming the catalytic containing layer.

If furnace annealing is used as another method of crystallization, thenheating is performed at 500° C. for on the order of 1 hour as apreprocess to heat treatment in order to release hydrogen contained inthe amorphous structure semiconductor film 704. Heat treatment is thenperformed within a nitrogen atmosphere using an electric furnace at atemperature of 550 to 600° C., preferably at 580° C. for four hours,crystallizing the amorphous structure silicon film 704. The crystallinestructure silicon film 706 shown in FIG. 7B is thus formed.

In addition, irradiation of laser light to the crystalline structuresilicon film 706 is effective for increasing the crystallinity (theproportion of crystal components in the entire volume of the film) andfor repairing defects remaining within crystal grains. Excimer laserlight having a wavelength equal to or less than 400 nm, and the secondharmonic and the third harmonic of a YAG laser may be used. Whicheverlaser is employed, pulse laser light having a repetition frequency ofapproximately 10 to 1000 Hz is used, and the laser light is condensed byan optical system so as to have a power density of 100 to 400 mJ/cm².Laser processing may then be performed on the crystalline structuresemiconductor film 706 while using an overlap ratio of 90 to 95%.

The catalytic element (nickel here) remains in the crystalline structuresemiconductor film 706 thus obtained. The distribution is not uniformthroughout the film, but the catalytic element with a concentration thatexceeds 1×10¹⁹/cm³ in average remains in the crystalline structuresemiconductor film 706. It is of course possible to form various typesof semiconductor elements, such as TFTs, in this state, but thecatalytic element is removed by gettering in accordance with the processshown below.

First, a thin barrier layer 707 is formed in the surface of thecrystalline structure semiconductor film 706 as shown in FIG. 7C. Thereare no particular limitations placed on the thickness of the barrierlayer 707, and chemical oxide formed simply by aqueous ozone processingmay also be substituted. Further, chemical oxide can also be similarlyformed by processing with an aqueous solution in which acid such assulfuric acid, hydrochloric acid, or nitric acid is mixed with hydrogenperoxide. Plasma processing within an oxygen atmosphere, or oxidationprocessing by generating ozone due to the irradiation of ultravioletlight within an oxygen containing atmosphere may also be performed asother methods of forming the barrier layer. In addition, a thin oxidefilm formed by heating at a temperature of 200 to 350° C. using a cleanoven may also be used as the barrier layer. Alternatively, an oxide filmhaving a thickness on the order of 1 to 5 nm may also be deposited asthe barrier layer by using a method such as plasma CVD, sputtering, orevaporation.

A semiconductor film 708 is then formed having a thickness of 25 to 250nm on the barrier layer by plasma CVD or sputtering. Typically, anamorphous silicon film containing from 0.01 to 20 atomic % of argon isformed by sputtering using argon. The semiconductor film 708 is laterremoved, and therefore it is preferable to use a low density film inorder to increase its selectivity with the crystalline structuresemiconductor film 706 during etching. Gettering sites can be formed ifan inert gas element is added within the amorphous silicon film, and aninert gas element is similarly placed throughout the film.

One element, or a plurality of elements, chosen from the groupconsisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), andxenon (Xe) are used as the inert gas element. The inert gas element isused as an ion source in order to form gettering sites in the presentinvention, and the inert gas element is injected into the semiconductorfilm by ion doping or ion injection. There are two reasons for injectingthe ions of the inert gas element. One is that dangling bonds are formedby injection, imparting distortion to the semiconductor film, and theother reason is that the ions are injected within the semiconductor filmlattice, also imparting distortion. Injection of the inert gas ions cansatisfy both the reasons at the same time, but in particular, remarkableresults can be obtained due to the latter reason when using elementshaving a larger atomic size than silicon, such as argon (Ar), krypton(Kr), and xenon (Xe).

It becomes necessary to perform heat treatment afterward in order toachieve gettering with certainty. Furnace annealing or RTA is performedfor the heat treatment. When furnace annealing is used, heat treatmentis performed for 0.5 to 12 hours at a temperature of 450 to 600° C. in anitrogen atmosphere. Further, if RTA is used, a heating lamp lightsource is turned on for 1 to 60 seconds, preferably from 30 to 60seconds, and this is repeated between 1 and 10 times, preferably between2 and 6 times. The intensity of the light emitted from the lamp lightsource may be arbitrarily set, but processing is performed such that thesemiconductor film is heated instantaneously to a temperature of 600 to1000° C., preferably to a temperature between 700 and 750° C.

During gettering, the catalytic elements in regions to be gettered(capture sites) are released by thermal energy, and then move to thegettering sites by diffusion. Gettering therefore depends on theprocessing temperature, and the time needed for gettering to proceedbecomes shorter as the processing temperature becomes higher. As shownby the arrow in FIG. 7E, there is a distance on the order of thethickness of the semiconductor film in the movement direction for thecatalytic elements, and therefore gettering can be accomplished in arelatively short period of time.

Note that the semiconductor film 708 containing the inert gas elementsat a concentration equal to or greater than 1×10²⁰/cm³, is notcrystallized by this heat treatment. This is thought to be because theinert gas elements are not released again and remain within the film inthe above stated processing temperature range, thus inhibitingcrystallization of the semiconductor film.

Thereafter, the amorphous semiconductor film 708 is then selectivelyetched and removed. Dry etching by ClF₃ not using plasma, and wetetching by an alkaline solution such as an aqueous solution containinghydrazine or tetraethyl ammonium hydroxide (chemical formula (CH₃)₄NOH)can be used as etching methods. The barrier layer 707 functions as anetching stopper at this time. Further, the barrier layer 707 may beremoved later by using hydrofluoric acid.

A semiconductor film 710 having a crystalline structure and in which theconcentration of the catalytic element is lowered to be equal to, orless than, 1×10¹⁷/cm³, can thus be obtained as shown in FIG. 7E. Thecrystalline structure semiconductor film 710 thus formed is one in whichthin rod shape or thin flattened rod shape crystals are formed due tothe catalytic element action, and crystal growth is such that there is aspecific directionality present in each of the crystals when viewedmacroscopically. The crystalline structure semiconductor film 710manufactured in Embodiment 3 can be applied to the semiconductor filmsshown in Embodiment 1 or 2.

Embodiment 4

Another method of gettering the catalytic elements remaining in thecrystalline structure semiconductor film 706 obtained in Embodiment 3 isshown in FIGS. 8A to 8C. A silicon oxide film as a mask is formed havinga thickness of 150 nm on the crystalline structure semiconductor film706, and a resist mask 712 is formed. A mask insulating film 711 is nextobtained by etching the silicon oxide film. A noble gas element, or anoble gas element and phosphorous, or just phosphorous is then injectedinto the crystalline semiconductor film 706 by ion doping, forminggettering sites 713.

Heat treatment is then performed by furnace annealing within a nitrogenatmosphere at 450 to 600° C. for 0.5 to 12 hours, as shown in FIG. 8B.The catalytic element remaining in the crystalline structuresemiconductor film 706 can thus be moved to the gettering sites 713 andconcentrated.

The crystalline structure semiconductor film 710 can then be obtained byremoving the mask insulating film 711 and the gettering sites byetching. The crystalline structure semiconductor film 710 manufacturedby Embodiment 4 can be applied to the semiconductor films shown byEmbodiments 1 and 2.

Embodiment 5

A 1 to 10 nm thick silicon nitride film can also be used as the baseinsulating film formed on the substrate 701 in Embodiment 3. FIG. 9shows a state in which the crystalline structure semiconductor film 706,the barrier layer 707, the semiconductor film 708, and the semiconductorfilm 709 into which a noble gas element is added have been manufacturedby processes similar to those of Embodiment 3, using such a siliconnitride film as a base insulating film 720, after which gettering hasbeen performed by heat treatment. A catalytic element such as nickel hasa quality of being captured by oxygen or in the vicinity of oxygen. Thecatalytic element can therefore be moved easily from the crystallinestructure semiconductor film 706 to the semiconductor film 708, or tothe semiconductor film 709 to which the inert gas element has beenadded, by forming the base insulating film from a silicon nitride film.The semiconductor films can be applied to the semiconductor films shownin Embodiments 1 and 2.

Embodiment 6

A case of using a semiconductor film (typically silicon), obtained byheat treatment at a high temperature, in a semiconductor layercontaining a channel forming region, a source region, and a drain regionis explained in Embodiment 6.(The semiconductor film is hereafterreferred to as a high temperature polysilicon film.)

An amorphous semiconductor film is formed on a quartz substrate havinghigh heat resistivity by using PECVD. Heat treatment is performed nextfor 24 hours at a temperature of 600° C. using a furnace, forming acrystalline semiconductor film. Note that a silicon oxide film is formedon the semiconductor film surface during this crystallization process,but this does not pose any problems because the silicon oxide film is anextremely thin film that can be removed by a process such as etching.

The oxide film formed on the surface of the crystalline semiconductorfilm is removed next, and then heat treatment for forming a gateinsulating film is performed. The crystalline semiconductor film is heattreated at a temperature of 900 to 1050° C., and an oxide film is formedon the surface of the crystalline semiconductor film. This silicon oxidefilm is used as the gate insulating film. A silicon oxide film may thenbe formed on the surface of the crystalline semiconductor film byperforming heat treatment of the crystalline semiconductor film suchthat the final film thickness of the crystalline semiconductor filmbecomes 30 to 50 nm.

The semiconductor film thus obtained by high temperature heat treatmenthas good crystallinity and a high electric field effect mobility. TFTshaving superior characteristics can be achieved by using thesemiconductor film in a semiconductor layer containing a channel formingregion, a source region, and a drain region. In addition, asemiconductor device having high reliability can be realized by usingthe TFTs in circuits. It is possible to combine Embodiment 6 withEmbodiments 1 and 2.

Embodiment 7

An example of a process of manufacturing a light emitting device isexplained in Embodiment 7 using FIG. 15.

FIG. 15 is an example showing the structure of an active matrix drivelight emitting device. An n-channel TFT 652 and a p-channel TFT 653 of adrive circuit portion, and a switching TFT 654 and an electric currentcontrol TFT 655 of a pixel portion 651 shown here are manufactured byprocesses similar to those of Embodiment 1 according to the presentinvention.

A first interlayer insulating film 618 made from silicon nitride orsilicon oxynitride is formed on gate electrodes 608 to 611, and is usedas a protective film. In addition, a second interlayer insulating film619 made from an organic resin material such as polyimide or acrylic isformed as a leveling film.

The circuit structure of the driver circuit portion 650 differs betweena gate signal line driver circuit and a data signal line driver circuit,but this is omitted here. Wirings 612 and 613 are connected to then-channel TFT 652 and to the p-channel TFT 653, and circuits such asshift registers, latch circuits, and buffer circuits are formed by usingthose TFTs.

In the pixel portion 651, a data wiring 614 is connected to a sourceside of the switching TFT 654, and a drain side wiring 615 is connectedto the gate electrode 611 of the electric current control TFT 655.Further, a source side of the electric current control TFT 655 isconnected to an electric power source supply wiring 617, and a drainside electrode 616 is connected to an anode of a light emitting element.

A first interlayer insulating film 618 is then formed, and a secondinterlayer insulating film 619 is formed next. An inorganic insulatingmaterial may be formed having an average film thickness from 1.0 to2.0,μm as the second interlayer insulating film 619. A silicon oxidefilm or a silicon oxynitride film may be formed as an inorganic resinfilm using a known sputtering method or plasma CVD method. In addition,the inorganic resin film may be formed by plasma CVD using SiH₄ and N₂Oas raw material gasses if a silicon oxynitride film is used, with filmdeposition conditions of a pressure of 0.3 torr, a substrate temperatureof 400° C., an RF output of 100 W, and raw material gas flow rates of 4sccm and 400 sccm for SiH₄ and N₂O, respectively. Further, an SOG filmmay also be used as the second interlayer insulating film 619. Inaddition, the second interlayer insulating film 619 may also bemanufactured using an organic insulating film such as acrylic.

Note that it is preferable to polish and level the surface of the secondinterlayer insulating film 619, by using a technique referred to as CMP(chemical mechanical polishing) for cases in which the second interlayerinsulating film 619 is manufactured using an inorganic insulating film.CMP is a method in which a surface of a workpiece to be polished istaken as a standard, and chemical and mechanical leveling is performedon the surface. In general, a polishing cloth or a polishing pad(hereafter referred to as a pad in this specification) is attached to aplaten or a polishing plate. The platen or polishing plate, and thepiece to be polished, are then each rotated or oscillated while a slurryis supplied between the workpiece and the polishing pad. Processing ofthe surface of a polishing agent is thus performed by a compoundchemical and mechanical action. Note that polishing is performed suchthat the average film thickness of the second interlayer insulating film619 is set on the order of 1.0 to 2.0 ,μm after the leveling process byCMP is complete.

A third insulating film 620 and a fourth insulating film 621 are thenformed. The fourth insulating film 621 made from silicon nitride orsilicon oxynitride fulfills a role of protecting the semiconductor filmthat is the main structural element of the TFT from contamination byalkaline metals or organic substances contained within an organiccompound layer 624, as well as protecting the organic compound layer 624from degradation due to oxygen and moisture.

A transparent conductive film having a thickness of 80 to 120 nm isformed next on the fourth insulating film 621, and an anode 622 isformed by etching. Note that an indium tin oxide (ITO) film or atransparent conductive film in which indium oxide is mixed with 2 to 20%zinc oxide (ZnO), is used as a transparent electrode in Embodiment 7.

In order to form a barrier layer 623 which covers edge portions of theanode 622, a film of a material such as resist, polyimide, polyamide,acrylic, BCB (benzocyclobutene), or silicon oxide is formed. Providedthat the barrier layer has insulating properties, both organic andinorganic materials may be used. Note that if a photosensitive acrylicis used to form the barrier layer, it is preferable to perform heattreatment at a temperature of 180 to 350° C. after etching a film of thephotosensitive acrylic. Furthermore, it is preferable to perform heattreatment at a temperature of 180 to 350° C. and then to performetching, forming the barrier layer 623, if the barrier layer is formedusing a non-photosensitive acrylic film. The barrier layer may be formedby a method such as CVD if a silicon oxide film is used.

An organic compound layer 624 and a cathode 625 are then formed byevaporation on the anode 622 and the barrier layer 623. Note thatalthough an MgAg electrode is used as the cathode of the light emittingelements in Embodiment 7, other known materials may also be used. Inaddition, the organic compound layer 624 may be formed by combining andlaminating a plurality of layers, such as a hole injecting layer, a holetransporting layer, an electron transporting layer, an electroninjecting layer, and a buffer layer, in addition to a light emittinglayer. The detailed structure of the organic compound layer 624 may bearbitrarily determined.

An organic light emitting element 626 composed of the anode 622, theorganic compound layer 624, and the cathode 625 is thus formed.

A fifth insulating film 627 is then formed of an insulating film such asa DLC film. A light emitting device in which the barrier layer has atapered shape can thus be manufactured as shown in FIG. 15.

The semiconductor device of the present invention, capable of achievingboth a low leak current and a high on current, in which the TFT size isreduced, can be particularly effective when applied to a light emittingdevice in which a switching TFT and an electric current control TFT, atleast two TFTs are formed within one pixel, and a reduction in theaperture ratio (lower brightness, lower light emission efficiency) is aproblem.

Embodiment 8

The active matrix liquid crystal display device (liquid crystal displaydevice) formed by executing the present invention can be used in thedisplay portion of various electric equipments.

The following can be given as such electric equipment using the liquidcrystal display device in the display portion: a video camera, a digitalcamera, a projector (rear type or front type), a head mounted display(goggle type display), a personal computer, and a portable informationterminal (such as a mobile computer, a portable telephone, or anelectronic book). Some examples of these are shown in FIGS. 11A to 13C.

FIG. 11A shows a personal computer, which contains components such as amain body 2001, an image input portion 2002, a display portion 2003, anda keyboard 2004.

FIG. 11B shows a video camera, which contains components such as a mainbody 2101, a display portion 2102, an audio input portion 2103,operation switches 2104, a battery 2105, and an image receiving portion2106.

FIG. 11C shows a mobile computer, which contains components such as amain body 2201, a camera portion 2202, an image receiving portion 2203,operation switches 2204, and a display portion 2205.

FIG. 11D shows a goggle type display, which contains components such asa main body 2301, a display portion 2302, and arm portions 2303.

FIG. 11E shows a player which uses a recording medium with a programrecorded therein (hereinafter referred to as a recording medium), whichcontains components such as a main body 2401, a display portion 2402, aspeaker portion 2403, a recording medium 2404, and operation switches2405. Note that a DVD (digital versatile disk) or CD (compact disk) isused as the recording medium for this player, and that appreciation ofmusic or a movie or performing games or the Internet can be done.

FIG. 11F shows a digital camera, which contains components such as amain body 2501, a display portion 2502, an eye piece portion 2503,operation switches 2504, and an image receiving portion (not shown inthe figure).

FIG. 12A shows a front type projector, which contains components such asa projecting apparatus 2601 and a screen 2602.

FIG. 12B shows a rear type projector, which contains components such asa main body 2701, a projecting apparatus 2702, a mirror 2703, and ascreen 2704. Note that an example of the structure of the projectingapparatuses 2601 and 2702 of FIG. 12A and FIG. 12B is shown in FIG. 12C.The projecting apparatuses 2601 and 2702 are each composed of a lightsource optical system 2801, mirrors 2802 and 2804 to 2806, a dichroicmirror 2803, a prism 2807, the liquid crystal display device 2808, aphase difference plate 2809, and a projecting optical system 2810. Theprojecting optical system 2810 is composed of an optical systemincluding a projection lens. A three-plate type example is shown inEmbodiment 8, but there are no particular limitations, and asingle-plate type may also be used, for example. Further, opticalsystems such as an optical lens, a film having a light polarizingfunction, a film for regulating the phase difference, and an IR film maybe suitably placed in the optical path shown by the arrow in FIG. 12C bythe operator.

Furthermore, FIG. 12D is a diagram showing one example of the lightsource optical system 2801 in FIG. 12C. In Embodiment 8, the lightsource optical system 2801 is composed of a reflector 2811, a lightsource 2812, lens arrays 2813 and 2814, a polarizing conversion element2815, and a condenser lens 2816. Note that the light source opticalsystem shown in FIG. 12D is one example, and the light source opticalsystem is not limited to the structure shown in the figure. For example,optical systems such as an optical lens, a film having a lightpolarizing function, a film for regulating the phase difference, and anIR film may be suitably added to the light source optical system by theoperator.

Note that a case using a transmitting type electro-optical device in theprojectors shown in FIG. 12A is shown here, and examples of applying areflecting type liquid crystal display device is not shown in thefigures.

FIG. 13A shows a portable telephone, and reference numerals 3001 and3002 denote a display panel and an operation panel, respectively. Thedisplay panel 3001 and the operation panel 3002 are connected through aconnecting portion 3003. In the connecting portion 3003, an angle θformed by the surface on which a display portion 3004 of the displaypanel 3001 is provided and the surface on which operation keys 3006 ofthe operation panel 3002 are provided can be arbitrarily changed.Further, the portable telephone includes an audio output portion 3005,the operation keys 3006, a power source switch 3007, and an audio inputportion 3008.

FIG. 13B shows a portable book (electronic book), which containscomponents such as a main body 3101, display portions 3102 and 3103, arecording medium 3104, operation switches 3105, and an antenna 3106.

FIG. 13C shows a display, which contains components such as a main body3201, a support stand 3202, and a display portion 3203. The display ofthe present invention is advantageous for cases of large size screens inparticular, and is advantageous for displays having a diagonal equal toor greater than 10 inches (in particular, equal to or greater than 30inches).

The applicable range of the present invention is thus extremely wide,and the present invention can be applied to electronic equipment of allfields. Furthermore, the electronic equipment in this embodiment can berealized by using a liquid crystal display device formed by using anactive matrix substrate formed in accordance with any combination ofEmbodiments 1 to 5.

TFTs having good electrical characteristics without enlarging the sizeof their active layers can be manufactured in accordance with thepresent invention. In particular, the present invention is effective formanufacturing present day liquid crystal display devices in which a highaperture ratio is sought by increasing the number of pixels and reducingthe pixel size for achieving high image quality.

Furthermore, TFTs corresponding to the performance demanded by varioustypes of circuits can be made separately, without increasing the numberof manufacturing process steps, in accordance with the presentinvention. The operational characteristics of the active matrixsubstrate can be improved.

1. A semiconductor device comprising: a semiconductor layer comprising achannel region, a first impurity region, a second impurity region and apair of third impurity regions over a substrate; a gate insulating filmformed over the semiconductor layer; and a gate electrode formed overthe gate insulating film, wherein the channel region is disposed betweenthe pair of third impurity regions, the first and second impurityregions are disposed between the channel region and the pair of thirdimpurity regions, wherein the gate electrode comprises a laminate of anelectrode (A) and an electrode (B), and one edge portion of theelectrode (A) overlaps with the second impurity region through the gateinsulating film, and another edge portion of the electrode (A) overlapswith the channel region through the gate insulating film, and wherein aconcentration of the second impurity region is greater than aconcentration of the first impurity region.
 2. A semiconductor devicecomprising: a semiconductor layer comprising first and second channelregions, two first impurity regions, two second impurity regions andthree third impurity regions over a substrate; a gate insulating filmformed over the semiconductor layer; and first and second gateelectrodes formed on the gate insulating film, wherein one of the threethird impurity regions is disposed between the two second impurityregions, the two second impurity regions are disposed between the firstand second channel regions, the first and second channel regions aredisposed between the two first impurity regions, and the two firstimpurity regions are disposed between the other two of the three thirdimpurity regions, wherein each of the first and second gate electrodescomprises a laminate of an electrode (A) and an electrode (B), and oneedge portion of the electrode (A) overlaps with one of the two secondimpurity regions through the gate insulating film, and another edgeportion of the electrode (A) overlaps with the channel region throughthe gate insulating film, and wherein a concentration of the secondimpurity regions is greater than a concentration of the first impurityregions.
 3. A semiconductor device comprising: a semiconductor layercomprising first and second channel regions, two first impurity regions,two second impurity regions and three third impurity regions over asubstrate; a gate insulating film formed over the semiconductor layer;and first and second gate electrodes formed on the gate insulating film,wherein one of the three third impurity regions is disposed between thetwo second impurity regions, the two second impurity regions aredisposed between the first and second channel regions, the first andsecond channel regions are disposed between the two first impurityregions, and the two first impurity regions are disposed between theother two of the three third impurity regions, wherein each of the firstand second gate electrodes comprises a laminate of an electrode (A) andan electrode (B), and one edge portion of the electrode (A) overlapswith one of the two second impurity regions through the gate insulatingfilm, and another edge portion of the electrode (A) overlaps with thechannel region through the gate insulating film, wherein the first,second and third impurity regions include an n-type impurity element,and each of the third impurity regions is a source or drain region, andwherein a concentration of the second impurity regions is greater than aconcentration of the first impurity regions.
 4. A semiconductor deviceaccording to claim 1, wherein: the first impurity region contains ann-type impurity element at a concentration of 1 ×10¹⁵ to 1 ×10¹⁷/cm³;the second impurity region contains the n-type impurity element at aconcentration of 1 ×10¹⁷ to 1 ×10¹⁹/cm³; and the third impurity regionscontain the n-type impurity element at a concentration of 1 ×10²⁰ to 1×10²¹/cm³.
 5. A semiconductor device according to claim 2, wherein: thefirst impurity regions contain an n-type impurity element at aconcentration of 1 ×10¹⁵ to 1 ×10¹⁷/cm³; the second impurity regionscontain the n-type impurity element at a concentration of 1 ×10¹⁷ to 1×10¹⁹/cm³; and the third impurity regions contain the n-type impurityelement at a concentration of 1 ×10²⁰ to 1 ×10²¹/cm³.
 6. A semiconductordevice according to claim 3, wherein: the first impurity regions containthe n-type impurity element at a concentration of 1 ×10¹⁵ to 1×10¹⁷/cm³; the second impurity regions contain the n-type impurityelement at a concentration of 1 ×10¹⁷ to 1 ×10¹⁹/cm³; and the thirdimpurity regions contain the n-type impurity element at a concentrationof 1 ×10²⁰ to 1 ×10²¹/cm³.
 7. A semiconductor device according to claim1, wherein: the electrode (A) comprises a conductive film made from anelement selected from the group consisting of W, Mo, Ta, and Ti; aconductive film made from a chemical compound having one of the elementsas its main constituent; or a conductive film made from an alloy havingone of the elements as its main constituent.
 8. A semiconductor deviceaccording to claim 2, wherein: the electrode (A) comprises a conductivefilm made from an element selected from the group consisting of W, Mo,Ta, and Ti; a conductive film made from a chemical compound having oneof the elements as its main constituent; or a conductive film made froman alloy having one of the elements as its main constituent.
 9. Asemiconductor device according to claim 3, wherein: the electrode (A)comprises a conductive film made from an element selected from the groupconsisting of W, Mo, Ta, and Ti; a conductive film made from a chemicalcompound having one of the elements as its main constituent; or aconductive film made from an alloy having one of the elements as itsmain constituent.
 10. A semiconductor device according to claim 1,wherein: the electrode (B) comprises a conductive film made from anelement selected from Al and Cu; a conductive film made from a chemicalcompound having one of the elements as its main constituent; or aconductive film made from an alloy having one of the elements as itsmain constituent.
 11. A semiconductor device according to claim 2,wherein: the electrode (B) comprises a conductive film made from anelement selected from Al and Cu; a conductive film made from a chemicalcompound having one of the elements as its main constituent; or aconductive film made from an alloy having one of the elements as itsmain constituent.
 12. A semiconductor device according to claim 3,wherein: the electrode (B) comprises a conductive film made from anelement selected from Al and Cu; a conductive film made from a chemicalcompound having one of the elements as its main constituent; or aconductive film made from an alloy having one of the elements as itsmain constituent.
 13. A semiconductor device comprising: a semiconductorlayer comprising first and second channel regions, two first impurityregions, two second impurity regions and three third impurity regionsover a substrate; a gate insulating film formed over the semiconductorlayer; and first and second gate electrodes formed on the gateinsulating film, wherein one of the two first impurity regions isadjacent to the first channel region and one of the three third impurityregions, wherein another of the three third impurity regions is adjacentto the two second impurity regions, wherein each of the first and secondgate electrodes comprises a laminate of an electrode (A) and anelectrode (B), and one of a right side edge portion and a left side edgeportion of the electrode (A) overlaps with one of the two secondimpurity regions through the gate insulating film, and the other one ofthe right side edge portion and the left side edge portion of theelectrode (A) does not overlap with the first impurity regions, andwherein the electrode (A) is on the gate insulating film, and theelectrode (B) is on the electrode (A).
 14. A semiconductor devicecomprising: a semiconductor layer comprising first and second channelregions, two first impurity regions, two second impurity regions andthree third impurity regions over a substrate; a gate insulating filmformed over the semiconductor layer; and first and second gateelectrodes formed on the gate insulating film, wherein one of the twofirst impurity regions is adjacent to the first channel region and oneof the three third impurity regions, wherein each of the first andsecond gate electrodes comprises a laminate of an electrode (A) and anelectrode (B), and one of a right side edge portion and a left side edgeportion of the electrode (A) overlaps with one of the two secondimpurity regions through the gate insulating film, and the other one ofthe right side edge portion and the left side edge portion of theelectrode (A) does not overlap with the first impurity regions, whereinthe electrode (A) is on the gate insulating film, and the electrode (B)is on the electrode (A), and wherein the first, second and thirdimpurity regions include an n-type impurity element, and each of thethird impurity regions is a source or drain region.
 15. A semiconductordevice comprising: a semiconductor layer comprising first and secondchannel regions, two first impurity regions, two second impurity regionsand three third impurity regions over a substrate; an interlayerinsulating film formed over the semiconductor layer; and first andsecond gate electrodes formed on and in contact with the interlayerinsulating film, wherein one of the two first impurity regions isadjacent to the first channel region and one of the three third impurityregions, wherein one of the three third impurity regions is disposedbetween the two second impurity regions, the two second impurity regionsare disposed between the first and second channel regions, the first andsecond channel regions are disposed between the two first impurityregions, and the two first impurity regions are disposed between theother two of the three third impurity regions, and wherein one of aright side edge portion and a left side edge portion of the first andsecond gate electrodes overlaps with one of the two second impurityregions through the interlayer insulating film, and the other one of theright side edge portion and the left side edge portion of the first andsecond gate electrodes does not overlap with the first impurity regions.16. A semiconductor device comprising: a semiconductor layer comprisingfirst and second channel regions, two first impurity regions, two secondimpurity regions and three third impurity regions over a substrate; aninterlayer insulating film formed over the semiconductor layer; andfirst and second gate electrodes formed on and in contact with theinterlayer insulating film, wherein one of the two first impurityregions is adjacent to the first channel region and one of the threethird impurity regions, wherein one of the three third impurity regionsis disposed between the two second impurity regions, the two secondimpurity regions are disposed between the first and second channelregions, the first and second channel regions are disposed between thetwo first impurity regions, and the two first impurity regions aredisposed between the other two of the three third impurity regions,wherein one of a right side edge portion and a left side edge portion ofthe first and second gate electrodes overlaps with one of the two secondimpurity regions through the interlayer insulating film, and the otherone of the right side edge portion and the left side edge portion of thefirst and second gate electrodes does not overlap with the firstimpurity regions, and wherein the first, second and third impurityregions include an n-type impurity element, and each of the thirdimpurity regions is a source or drain region.
 17. A semiconductor deviceaccording to claim 13, wherein: the first impurity regions contain ann-type impurity element at a concentration of 1 ×10¹⁵ to 1 ×10¹⁷/cm³;the second impurity regions contain the n-type impurity element at aconcentration of 1 ×10¹⁷ to 1 ×10¹⁹/cm³; and the third impurity regionscontain the n-type impurity element at a concentration of 1 ×10²⁰ to 1×10²¹/cm³.
 18. A semiconductor device according to claim 14, wherein:the first impurity regions contain the n-type impurity element at aconcentration of 1 ×10¹⁵ to 1 ×10¹⁷/cm³; the second impurity regionscontain the n-type impurity element at a concentration of 1 ×10¹⁷ to 1×10¹⁹/cm³; and the third impurity regions contain the n-type impurityelement at a concentration of 1 ×10²⁰ to 1 ×10²¹/cm³.
 19. Asemiconductor device according to claim 15, wherein: the first impurityregions contain an n-type impurity element at a concentration of 1 ×10¹⁵to 1 ×10¹⁷/cm³; the second impurity regions contain the n-type impurityelement at a concentration of 1 ×10¹⁷ to 1 ×10¹⁹/cm³; and the thirdimpurity regions contain the n-type impurity element at a concentrationof 1 ×10²⁰ to 1 ×10²¹/cm³.
 20. A semiconductor device according to claim16, wherein: the first impurity regions contain the n-type impurityelement at a concentration of 1 ×10¹⁵ to 1 ×10¹⁷/cm³; the secondimpurity regions contain the n-type impurity element at a concentrationof 1 ×10¹⁷ to 1 ×10¹⁹/cm³; and the third impurity regions contain then-type impurity element at a concentration of 1 ×10²⁰ to 1 ×10²¹/cm³.21. A semiconductor device according to claim 13, wherein thesemiconductor device is applied in a display portion of an electricequipment which is selected from the group consisting of a personalcomputer, a video camera, a mobile computer, a goggle type display, adigital versatile disk player, a compact disk player, a digital camera,a front type projector, a rear type projector, a portable telephone anda portable book.
 22. A semiconductor device according to claim 14,wherein the semiconductor device is applied in a display portion of anelectric equipment which is selected from the group consisting of apersonal computer, a video camera, a mobile computer, a goggle typedisplay, a digital versatile disk player, a compact disk player, adigital camera, a front type projector, a rear type projector, aportable telephone and a portable book.
 23. A semiconductor deviceaccording to claim 15, wherein the semiconductor device is applied in adisplay portion of an electric equipment which is selected from thegroup consisting of a personal computer, a video camera, a mobilecomputer, a goggle type display, a digital versatile disk player, acompact disk player, a digital camera, a front type projector, a reartype projector, a portable telephone and a portable book.
 24. Asemiconductor device according to claim 16, wherein the semiconductordevice is applied in a display portion of an electric equipment which isselected from the group consisting of a personal computer, a videocamera, a mobile computer, a goggle type display, a digital versatiledisk player, a compact disk player, a digital camera, a front typeprojector, a rear type projector, a portable telephone and a portablebook.
 25. A semiconductor device comprising: a semiconductor layercomprising a channel region, a first impurity region, a second impurityregion and a pair of third impurity regions over a substrate; a gateinsulating film formed over the semiconductor layer; and a gateelectrode formed on the gate insulating film, wherein the first impurityregion is adjacent to the channel region and one of the pair of thirdimpurity regions, wherein the gate electrode comprises a laminate of anelectrode (A) and an electrode (B), and the second impurity region iscompletely covered by one of a right side edge portion and a left sideedge portion of the electrode (A) through the gate insulating film, andthe other one of the right side edge portion and the left side edgeportion of the electrode (A) does not overlap with the first impurityregion, and wherein the electrode (A) is on the gate insulating film,and the electrode (B) is on the electrode (A).
 26. A semiconductordevice comprising: a semiconductor layer comprising a channel region, afirst impurity region, a second impurity region and a pair of thirdimpurity regions over a substrate; an interlayer insulating film formedover the semiconductor layer; and a gate electrode formed on and incontact with the interlayer insulating film, wherein the first impurityregion is adjacent to the channel region and one of the pair of thirdimpurity regions, wherein the second impurity region is completelycovered by one of a right side edge portion and a left side edge portionof the gate electrode, and the other one of the right side edge portionand the left side edge portion of the gate electrode does not overlapwith the first impurity region.
 27. A semiconductor device according toclaim 25, wherein: the first impurity region contains an n-type impurityelement at a concentration of 1 ×10¹⁵ to 1 ×10¹⁷/cm³; the secondimpurity region contains the n-type impurity element at a concentrationof 1 ×10¹⁷ to 1 ×10¹⁹/cm³; and the third impurity regions contain then-type impurity element at a concentration of 1 ×10²⁰ to 1 ×10²¹/cm³.28. A semiconductor device according to claim 26, wherein: the firstimpurity region contains an n-type impurity element at a concentrationof 1 ×10¹⁵ to 1 ×10¹⁷/cm³; the second impurity region contains then-type impurity element at a concentration of 1 ×10¹⁷ to 1 ×10¹⁹/cm³;and the third impurity regions contain the n-type impurity element at aconcentration of 1 ×10²⁰ to 1 ×10²¹/cm³.
 29. A semiconductor deviceaccording to claim 25, wherein: the electrode (A) comprises a conductivefilm made from an element selected from the group consisting of W, Mo,Ta, and Ti; a conductive film made from a chemical compound having oneof the elements as its main constituent; or a conductive film made froman alloy having one of the elements as its main constituent.
 30. Asemiconductor device according to claim 25, wherein: the electrode (B)comprises a conductive film made from an element selected from Al andCu; a conductive film made from a chemical compound having one of theelements as its main constituent; or a conductive film made from analloy having one of the elements as its main constituent.